CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2007-04-12

2009-11-24

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S059000, C257SE27133

Reexamination Certificate

active

07622319

ABSTRACT:
A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.

REFERENCES:
patent: 6908839 (2005-06-01), Rhodes
patent: 1020050117036 (2005-12-01), None
patent: 1020060000105 (2006-01-01), None
patent: 1020060002260 (2006-01-01), None
patent: 1020060063381 (2006-06-01), None
English Abstract for Publication No. 1020060000105.
English Abstract for Publication No. 1020060063381.
English Abstract for Publication No. 1020050117036.
English Abstract for Publication No. 1020060002260.

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