CMOS image sensor and manufacturing method of the same

Details CMOS image sensor and manufacturing method of the same CMOS image sensor and manufacturing method of the same

2005-01-04

2005-01-04

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S462000, C257S377000

Reexamination Certificate

active

06838716

ABSTRACT:
Without forming a silicide film on a surface of a photodiode PD formation portion and a surface of a drain portion of a reset transistor T1having an impurity region as a drain connected to an impurity region of the photodiode PD, the silicide film is formed on a surface of a source portion of the reset transistor T1and a surface of a source/drain portion of other MOS transistors.

REFERENCES:
patent: 5264721 (1993-11-01), Gotou
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6040592 (2000-03-01), McDaniel et al.
patent: 6040593 (2000-03-01), Park
patent: 6174810 (2001-01-01), Islam et al.
patent: 6184055 (2001-02-01), Yang et al.
patent: 6351003 (2002-02-01), Kuriyama
patent: 10-248035 (1998-09-01), None

Affiliated with

Also associated with

Rating

CMOS image sensor and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3384041