CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2007-12-21

2011-12-13

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S291000, C257S292000, C257SE25032, C257SE27122, C257SE27133

Reexamination Certificate

active

08076702

ABSTRACT:
A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased. The CMOS image sensor can include an epitaxial layer formed over a semiconductor substrate; a gate electrode formed over the epitaxial layer; a gate metal formed over a floating diffusion region of the epitaxial layer; n+ type source and drain regions formed in the epitaxial layer; a gate spacer formed on both sidewalls of the gate electrode and both sidewalls of the gate metal; an insulating interlayer formed over the epitaxial layer including the gate electrode, the gate spacer and the gate metal layer, the insulating interlayer including a first contact hole extending through the insulating interlayer exposing the source region; a second contact hole extending through the insulating interlayer exposing the gate metal; a first contact plug formed in the first contact hole and connected to the source region; a second contact plug formed in the second contact hole and connected to the gate metal; and a metal line formed over the first contact plug and the second contact plug to electrically connect the source region to the gate metal.

REFERENCES:
patent: 6403998 (2002-06-01), Inoue
patent: 2003/0138985 (2003-07-01), Rhodes
patent: 2006/0124969 (2006-06-01), Byun
patent: 10-2006-0077117 (2006-07-01), None
patent: 10-0654050 (2006-11-01), None

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