CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2008-06-11

2011-10-25

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S463000, C257SE27133

Reexamination Certificate

active

08044444

ABSTRACT:
A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n-type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first n-type ion implantation region being aligned at one side of the transfer gate and having a first width and a first ion implantation depth; forming a second n-type ion implantation region aligned at one side of the transfer gate, the second n-type ion implantation region enclosing the first n-type ion implantation region and having a second width wider than the first width and a second ion implantation depth deeper than the first ion implantation depth and a second depth; forming a p-type ion implantation region between a surface of the semiconductor substrate and the first n-type ion implantation region, the p-type ion implantation region being aligned at one side of the transfer gate and partially overlapped with the first n-type ion implantation region; forming spacers on both sidewalls of the transfer gate; and forming a floating diffusion region at the other side of the transfer gate.

REFERENCES:
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 6677656 (2004-01-01), François
patent: 6730899 (2004-05-01), Stevens et al.
patent: 2002/0190288 (2002-12-01), Lee et al.
patent: 2003/0151076 (2003-08-01), Kim
patent: 1999284166 (1999-10-01), None
patent: 2000091551 (2000-03-01), None
patent: 2003101004 (2003-04-01), None
patent: 2003264279 (2003-09-01), None
patent: 200340859 (2005-01-01), None
Korean Office Action dated Oct. 22, 2010.

Affiliated with

Also associated with

Rating

CMOS image sensor and fabricating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and fabricating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and fabricating method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4301965