Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-01
2008-12-30
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S291000, C257SE27133
Reexamination Certificate
active
07470945
ABSTRACT:
A CMOS image sensor is described, based on a substrate and including a transfer transistor, a reset transistor, a source follower transistor, a select transistor, a photodiode and a floating node structure. The substrate includes a floating node area between the transfer transistor and the reset transistor. The floating node structure includes a P-well in the substrate within the floating node area, an N-well in the substrate outside of the floating node region, a lightly N-doped region having a portion in the P-well and another portion connected with the N-well, a heavily N-doped region in the N-well, and a contact plug for coupling the heavily N-doped region to the source follower transistor.
REFERENCES:
patent: 6639261 (2003-10-01), Rhodes
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 6946715 (2005-09-01), Hong
patent: 7180111 (2007-02-01), Drowley et al.
patent: 2005/0001277 (2005-01-01), Rhodes
patent: 2005/0161713 (2005-07-01), Rhodes
patent: 2005/0189573 (2005-09-01), McClure
Title: The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures; authors: Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park; title of the item: IEEE Transactions on Electron Devices. vol. 51 No. 2. Feb. 2004; pp. p178-p184.
Belousov Alexander
J.C. Patents
Pham Thanh V
United Microelectronics Corp.
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