CMOS image sensor

Details CMOS image sensor CMOS image sensor

2005-05-24

2005-05-24

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S443000, C257S655000

Reexamination Certificate

active

06897500

ABSTRACT:
An example CMOS image sensor has pixel units and protection regions. The pixel unit has a light sensing region for converting an incident light into an electrical signal and an active region for controlling the transfer of the electrical signal. Each pixel unit is isolated by an element isolation layer. The protection region, which is located between each element isolation layer, prevents crosstalk generated between each pixel unit while the incident light is converted to the electrical signal. The protection region may include a well and a junction.

REFERENCES:
patent: 6040592 (2000-03-01), McDaniel et al.

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