CMOS image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08063423

ABSTRACT:
A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.

REFERENCES:
patent: 6924544 (2005-08-01), Wada et al.
patent: 2003/0112352 (2003-06-01), Tanaka
patent: 2005/0148114 (2005-07-01), Rhodes
patent: 06-326928 (1994-11-01), None
patent: 2001-094880 (2001-04-01), None
patent: 2000001025 (2001-07-01), None
patent: 2005-086232 (2005-03-01), None
patent: 10-0318408 (2001-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4289287

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.