CMOS image sensor

Details CMOS image sensor CMOS image sensor

2006-12-27

2011-11-22

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

08063423

ABSTRACT:
A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.

REFERENCES:
patent: 6924544 (2005-08-01), Wada et al.
patent: 2003/0112352 (2003-06-01), Tanaka
patent: 2005/0148114 (2005-07-01), Rhodes
patent: 06-326928 (1994-11-01), None
patent: 2001-094880 (2001-04-01), None
patent: 2000001025 (2001-07-01), None
patent: 2005-086232 (2005-03-01), None
patent: 10-0318408 (2001-12-01), None

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