CMOS image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S231000, C257S241000, C257S443000, C257S465000, C257S618000, C257S773000

Reexamination Certificate

active

08035171

ABSTRACT:
A pixel of a complementary metal oxide semiconductor (CMOS) image sensor includes a plurality of photodiodes for sensing light to thereby generate photoelectric charges in different regions; a plurality of transfer transistors for transferring photoelectric charges of corresponding photodiodes in response to a first control signal; a floating diffusion region for receiving photoelectric charges transferred by the plurality of transfer transistors; a rest transistor connected between a power supply voltage and the floating diffusion region for resetting the floating diffusion region by controlling a voltage loaded on the floating diffusion region in response to a second control signal; a drive transistor connected between the power supply voltage and the floating diffusion region to serve as a source follower buffer amplifier; and a select transistor connected between the drive transistor and a pixel output terminal for performing an addressing operation in response to a third control signal.

REFERENCES:
patent: 7030357 (2006-04-01), Lee
patent: 7663194 (2010-02-01), Lee
patent: 2004/0113151 (2004-06-01), Sekine
patent: 2006/0146158 (2006-07-01), Toros et al.

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