CMOS image sensor

Details CMOS image sensor CMOS image sensor

2009-12-28

2011-10-11

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S231000, C257S241000, C257S443000, C257S465000, C257S618000, C257S773000

Reexamination Certificate

active

08035171

ABSTRACT:
A pixel of a complementary metal oxide semiconductor (CMOS) image sensor includes a plurality of photodiodes for sensing light to thereby generate photoelectric charges in different regions; a plurality of transfer transistors for transferring photoelectric charges of corresponding photodiodes in response to a first control signal; a floating diffusion region for receiving photoelectric charges transferred by the plurality of transfer transistors; a rest transistor connected between a power supply voltage and the floating diffusion region for resetting the floating diffusion region by controlling a voltage loaded on the floating diffusion region in response to a second control signal; a drive transistor connected between the power supply voltage and the floating diffusion region to serve as a source follower buffer amplifier; and a select transistor connected between the drive transistor and a pixel output terminal for performing an addressing operation in response to a third control signal.

REFERENCES:
patent: 7030357 (2006-04-01), Lee
patent: 7663194 (2010-02-01), Lee
patent: 2004/0113151 (2004-06-01), Sekine
patent: 2006/0146158 (2006-07-01), Toros et al.

Affiliated with

Also associated with

Rating

CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4263356