CMOS image sensor

Details CMOS image sensor CMOS image sensor

2006-12-18

2010-11-30

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S214000, C257S215000, C257S233000, C257S239000, C257S258000, C257S288000, C257S290000, C257S461000, C257SE27122, C257SE27130, C257SE27133, C438S060000, C438S075000, C438S144000

Reexamination Certificate

active

07842985

ABSTRACT:
Disclosed is a CMOS image sensor including a gate electrode of a finger type transfer transistor for controlling the saturation state of a floating diffusion region according to the luminance level (i.e. low luminance or high luminance). The CMOS image sensor includes first and second photodiode regions for generating electrons in response to incident light, and a transfer transistor positioned between the first and second photodiodes for receiving the generated electrons transferred from the first and/or second photodiode.

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