CMOS image sensor

Details CMOS image sensor CMOS image sensor

2008-11-13

2010-11-30

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257SE27133

Reexamination Certificate

active

07842984

ABSTRACT:
A CMOS image sensor is described, based on a substrate and including a transfer transistor, a reset transistor, a source follower transistor, a select transistor, a photodiode and a floating node structure. The substrate includes a floating node area between the transfer transistor and the reset transistor. The floating node structure includes a P-well in the substrate within the floating node area, an N-well in the substrate outside of the floating node region, a lightly N-doped region having a portion in the P-well and another portion connected with the N-well, a heavily N-doped region in the N-well, and a contact plug for coupling the heavily N-doped region to the source follower transistor.

REFERENCES:
patent: 6690423 (2004-02-01), Nakamura et al.
patent: 7102184 (2006-09-01), Rhodes
patent: 2005/0023580 (2005-02-01), Rhodes
patent: 2005/0051701 (2005-03-01), Hong
patent: 2006/0118836 (2006-06-01), Rhodes
patent: 200541091 (2005-12-01), None

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