CMOS image sensor

Details CMOS image sensor CMOS image sensor

2006-12-27

2009-12-15

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S440000, C257SE27135

Reexamination Certificate

active

07633104

ABSTRACT:
Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode formed in a prescribed part of the silicon substrate, a first epitaxial layer formed on the silicon substrate, a second photodiode formed on the first epitaxial layer to overlap the first photodiode, a second epitaxial layer formed on the first epitaxial layer, a third photodiode formed on the second epitaxial layer to overlap the second photodiode, and first to third grounded dummy moats formed by implanting impurities into uniform parts on the silicon substrate, the first epitaxial layer, and the second epitaxial layer.

REFERENCES:
patent: 5283460 (1994-02-01), Mita
patent: 6750489 (2004-06-01), Merrill
patent: 2002/0058353 (2002-05-01), Merrill
patent: 2005/0077571 (2005-04-01), Kanda et al.
patent: H13-168313 (2001-06-01), None

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