CMOS image sensor

Details CMOS image sensor CMOS image sensor

2005-11-10

2008-10-14

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27131, C257SE31113

Reexamination Certificate

active

07436011

ABSTRACT:
A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.

REFERENCES:
patent: 7042061 (2006-05-01), Nakamura et al.
patent: 2004/0251398 (2004-12-01), Mouli
patent: 2005/0098806 (2005-05-01), Rhodes
patent: 2005/0206765 (2005-09-01), Nakashima
patent: 2005/0274874 (2005-12-01), Nozaki et al.
patent: 2006/0081887 (2006-04-01), Lyu
patent: 2006/0097296 (2006-05-01), Nam
patent: 2006/0118835 (2006-06-01), Ellis-Monaghan et al.

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