CMOS image sensor

Details CMOS image sensor CMOS image sensor

2007-08-28

2007-08-28

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S431000, C257S432000, C257S433000, C257S434000

Reexamination Certificate

active

11020526

ABSTRACT:
A CMOS image sensor is disclosed, to improve light-condensing efficiency by forming a minute lens array having a large curvature (long focal distance) for the increase in height of upper structures above a photodiode, which includes a lower layer formed of the photodiode, metal circuits, and insulating interlayers for insulating the metal circuits from one another; a color filter array of R, G and B formed on the lower layer; an overcoat layer formed on the color filter array; a micro-lens formed on the overcoat layer; and the minute lens array having minute lenses formed between the lower layer and the color filter array, each minute lens having a larger curvature than that of the micro-lens.

REFERENCES:
patent: 6617189 (2003-09-01), Chen et al.
patent: 7019373 (2006-03-01), Hashimoto
patent: 10-2002-0042098 (2002-06-01), None
Office Action issued by the Korean Intellectual Property Office on Jul. 27, 2006, in counterpart Korean Patent Application No. 10-2004-0046537.

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