Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-01
2007-05-01
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257SE27046, C257SE21632, C438S060000
Reexamination Certificate
active
11318503
ABSTRACT:
A CMOS image sensor includes a photo sensing device for generating photo charges, a floating diffusion region for storing the photo charges generated by the photo sensing device therein, a transfer transistor connected between the photo sensing device and the floating diffusion region for transferring the photo charges generated by the photo sensing device to the floating diffusion region, a reset transistor connected between a supply voltage terminal and the floating diffusion region for discharging the charges stored in the floating diffusion region to reset the floating diffusion region, a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo sensing device, a switching transistor connected to the drive transistor for performing an addressing operation, and a charge control device connected between the photo sensing device and the transfer transistor for controlling the amount of charges stored in the photo sensing device.
REFERENCES:
patent: 2006/0092300 (2006-05-01), Tan et al.
patent: 2000-23088 (2000-04-01), None
DongbuAnam Semiconductor Inc.
MeKenna Long & Aldridge LLP
Pert Evan
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