Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-14
2000-10-03
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257290, 257291, 257233, H01L 31062, H01L 31113, H01L 27148, H01L 29768
Patent
active
061276979
ABSTRACT:
An active pixel sensor comprising: a substrate of a first conductivity type having a surface containing PMOS and NMOS implants that are indicative of a sub-micron CMOS process; a photodetector formed at a first depth from an implant of a second conductivity type that is opposite the first conductivity type on the surface; a gate on the surface adjacent to the photodetector; and wherein the photodetector is formed by an implant of the second conductivity that is deeper and more lightly doped than implants used within the sub-micron CMOS process. The sensor has the photodetector is formed by an implant angled towards the gate. The preferred embodiment of the sensor further employs a pinning layer formed at a second depth that is less than the first depth from the first conductivity type more near the surface than the photodetector.
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128+128 CMOS Photodiode-Type Active Pixel Sensor With On-Chip Timing, Control And Signal Chain Electronics, by R. H. Nixon et al.
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Active Pixel Sensors: Are CCD'S Dinosaurs?, by Eric R. Fossum.
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A 250,000-Pixel Image Sensor With Fet Amplification At Each Pixel For High-Speed Television Cameras, by Andoh et al.
An 800K-Pixel Color CMOS Sensor For Consumer Still Cameras, by Hurwitz et al.
A 1/4 Inch 330k Square Pixel Progressive Scan CMOS Active Pixel Image Sensor, by Oba et al.
Eastman Kodak Company
Fenty Jesse A.
Hardy David
Leimbach James D.
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