Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000
Reexamination Certificate
active
11020990
ABSTRACT:
According to one exemplary embodiment, a method for integrating first and second metal layers on a substrate to form a dual metal NMOS gate and PMOS gate comprises depositing a dielectric layer over an NMOS region and a PMOS region of the substrate. The method further comprises depositing the first metal layer over dielectric layer. The method further comprises depositing the second metal layer over the first metal layer. The method further comprises implanting nitrogen in the NMOS region of substrate and converting a first portion of the first metal layer into a metal oxide layer and converting a second portion of the first metal layer into metal nitride layer. The method further comprises forming the NMOS gate and the PMOS gate, where the NMOS gate comprises a segment of metal nitride layer and the PMOS gate comprises a segment of the metal oxide layer.
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Lu et al,Metal Gate Work Function Adjustment for Future CMOS Technology, 2001 Symposium on VLSI Technology Digest of Technical Papers, 45-46 (Jun. 12, 2001).
Goo Jung-Suk
Holbrook Allison K.
Jeon Joong S.
Kluth George J.
Xiang Qi
Advanced Micro Devices , Inc.
Farjami & Farjami LLP
Vu David
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