CMOS gate stack

Details CMOS gate stack CMOS gate stack

1995-04-19

1997-08-05

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 2776, H01L 2994, H01L 31062, H01L 31113

Patent

active

056545703

ABSTRACT:
A gate structure in a CMOS is fabricated wherein the encapsulation material is self-aligned with the gate conductor and the gate channel. The gate conductor is formed subsequent to the device doping and heat cycles for formulation of the source and drain junction, and is preferably of greater width than the gate.

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