Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2006-02-09
2008-11-25
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S627000, C257S369000, C257S330000, C257S331000, C257S338000, C257S521000, C257S527000, C257SE29004
Reexamination Certificate
active
07456450
ABSTRACT:
The present invention relates to a semiconductor substrate comprising at least first and second device regions, wherein the first device region comprises a first recess having interior surfaces oriented along a first set of equivalent crystal planes, and wherein the second device region comprises a second recess having interior surfaces oriented along a second, different set of equivalent crystal planes. A semiconductor device structure can be formed using such a semiconductor substrate. Specifically, at least one n-channel field effect transistor (n-FET) can be formed at the first device region, which comprises a channel that extends along the interior surfaces of the first recess. At least one p-channel field effect transistor (p-FET) can be formed at the second device region, which comprises a channel that extends along the interior surfaces of the second recess.
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Chen Xiangdong
Dyer Thomas W.
Toomey James J.
Yang Haining S.
International Business Machines - Corporation
Kim Jay C
Landau Matthew C.
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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