Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-06-05
2007-06-05
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S069000, C257S206000, C257S338000, C257S350000, C257S351000
Reexamination Certificate
active
10927858
ABSTRACT:
The present invention provides a complementary metal oxide semiconductor (CMOS) device, a method of manufacture therefor, and an integrated circuit including the same. The CMOS device (100), in an exemplary embodiment of the present invention, includes a p-channel metal oxide semiconductor (PMOS) device (120) having a first gate dielectric layer (133) and a first gate electrode layer (138) located over a substrate (110), wherein the first gate dielectric layer (133) has an amount of nitrogen located therein. In addition to the PMOS device (120), the CMOS device further includes an n-channel metal oxide semiconductor (NMOS) device (160) having a second gate dielectric layer (173) and a second gate electrode layer (178) located over the substrate (110), wherein the second gate dielectric layer (173) has a different amount of nitrogen located therein. Accordingly, the present invention allows for the individual tuning of the threshold voltages for the PMOS device (120) and the NMOS device (160).
REFERENCES:
patent: 5763922 (1998-06-01), Chau
patent: 6228721 (2001-05-01), Yu
patent: 6255698 (2001-07-01), Gardner et al.
Alshareef Husam
Khamankar Rajesh
Varghese Ajith
Brady III W. James
Louie Wai-Sing
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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