CMOS device having a reduced short channel effect

Details CMOS device having a reduced short channel effect CMOS device having a reduced short channel effect

1997-10-23

1999-07-27

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257336, 257338, 257372, H01L 2976, H01L 2994

Patent

active

059294868

ABSTRACT:
A CMOS device includes a first MOS transistor of a surface channel type and a second MOS transistor of a buried channel type on a common substrate wherein a doped layer is provided underneath a first channel layer of the first MOS transistor and a second channel layer of the second MOS transistor, such that the first channel layer is provided at a level closer to a principal surface of the substrate as compared with source and drain regions of the first and second MOS transistors.

REFERENCES:
patent: 5208473 (1993-05-01), Komori et al.
patent: 5548143 (1996-08-01), Lee

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