CMOS device connected to at least three power supplies for preve

Details CMOS device connected to at least three power supplies for preve CMOS device connected to at least three power supplies for preve

1997-01-16

1999-04-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, 257378, 257546, 365226, H01L 2702, H01L 2906

Patent

active

058922636

ABSTRACT:
A complementary metal-oxide-semiconductor device having a semiconductor region of an n conductivity type connected to a high-potential power supply, in which a p-channel MOSFET is formed, and a semiconductor region of a p conductivity type connected to a low-potential power supply, in which an n-channel MOSFET is formed, characterized in that at least one of the following two states, that is, one state in which a source of said p-channel MOSFET is connected to a lower high-potential power supply having a potential lower than that of said high-potential power supply and another state in which a source of said n-channel MOSFET is connected to a higher low-potential power supply having a potential higher than that of said low-potential power supply is realized.

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