Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
06878995
ABSTRACT:
A CMOS-compatible DMOS transistor can be designed by virtue of a suitable layout configuration optionally for very high drain voltages or for power amplification at very high frequencies and which can be produced at a low level of additional cost in comparison with a conventional sub-μm production technology for CMOS circuits. A gate insulator of the transistor is of a unitary thickness under a control gate in the entire (active) region through which current flows. A zone of increased doping concentration (well region) which is near the surface and which determines the transistor threshold voltage is so arranged under the control gate that it occupies the entire area under the control gate which is on the active region and ends within a so-called drift space between the control gate and a highly doped drain region. The entire surface of the drift space is covered by a zone of the conductivity type of the drain region (VLDD), which is lowly doped in comparison with the highly doped drain region.
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Ehwald Karl-Ernst
Heinemann Bernd
Knoll Dieter
Winkler Wolfgang
Clark Robert J.
Fourson George
Hahn Loeser & Parks LLP
IHP GmbH - Innovations for High Performance Microelectronics
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