CMOS-based, low leakage active pixel array with anti-blooming is

Details CMOS-based, low leakage active pixel array with anti-blooming is CMOS-based, low leakage active pixel array with anti-blooming is

1995-08-04

1997-03-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257292, 257369, 257373, 257376, 257446, 257544, 257546, 257547, H01L 31062

Patent

active

056147449

ABSTRACT:
An active pixel image sensor in accordance with the present invention utilizes guard rings, protective diffusions, and/or a combination of these two techniques to prevent electrons generated at the periphery of the active area from impacting upon the image sensor array. For example, an n+ guard ring connected to V.sub.cc can be imposed in the p-epi layer between the active area edge and the array, making it difficult for edge-generated electrons to penetrate the p+ epi in the array; this approach requires the use of annular MOS devices in the array. Alternatively, the gates of the n-channel devices in the array can be built to overlap heavily doped p+ bands, forcing current flow between the source/drain regions. As stated above, combinations of these two techniques are also contemplated. Elimination of the active area edge leakage component from the array can increase the dynamic range of the image sensor by 6 bits.

REFERENCES:
Fumihiko Andon et al., "A 250,000-Pixel Image Sensor with FET Amplification at Each Pixel for High-Speed Television Cameras", IEEE International Solid State Circuits Conference, Feb. 16, 1990, pp. 212-213.

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