Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S371000, C257S448000, C257S461000, C257S462000, C257S463000
Reexamination Certificate
active
11036937
ABSTRACT:
An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+region is formed extending from within the P well into the substrate leaving a gap between the P+region and the N well. A gate dielectric is formed covering at least the gap, part of the P+region, and part of the N well. A gate electrode is formed on the gate dielectric over the gap, part of the P+region, and part of the N well. The gate electrode is biased so that the region of the substrate under the gate electrode is accumulated with holes and the region of the N well under the gate electrode is depleted of electrons. This will reduce the dark current and improve the sensitivity of the active pixel sensor. In a second embodiment the P type epitaxial substrate is replaced by an N type epitaxial substrate, the N well is replaced by a P well, N+regions are replaced by P+regions, and P+regions are replaced by N+regions. In this second embodiment the gate electrode is biased so that the region of the substrate under the gate electrode is depleted of electrons and the region of the P well under the gate electrode is accumulated with holes.
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Ackerman Stephen B.
Dialog Semiconductor GmbH
Prescott Larry J.
Saile Ackerman LLC
Soward Ida M.
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