CMIS device with increased gain

Details CMIS device with increased gain CMIS device with increased gain

1994-11-01

1995-10-31

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257204, 257206, 257393, 257401, 326 63, 326 68, 326121, 327437, H01L 2708, H01L 2978, H03K 1716, H03K 513

Patent

active

054632404

ABSTRACT:
In a CMIS device having a semiconductor substrate including a first N-type region and a P-type region, a second P-type region is formed within the first N-type region, and a second N-type region is formed within the first P-type region. Also, a third N-type region is formed within the second P-type region, and a third N-type region is formed within the second N-type region. An N-channel transistor is formed by the first N-type region as a drain, the second P-type region as a channel, and the third N-type region as a source. A P-channel transistor is formed by the first P-type region as a drain, the second N-type region as a channel, and the third P-type region as a source.

REFERENCES:
patent: 4701643 (1987-10-01), Laude et al.
patent: 4823176 (1989-04-01), Baliga et al.
patent: 5175445 (1992-12-01), Kinugasa et al.
patent: 5291083 (1994-03-01), Blalock et al.
S. A. Steiner et al., "High-Performance Column Driver for Gray-Scale TFEL Displays", SID 88 Digest, pp. 31-34, 1988.

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