Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing
Reexamination Certificate
1998-07-28
2001-11-20
Lee, Thomas (Department: 2182)
Data processing: generic control systems or specific application
Specific application, apparatus or process
Product assembly or manufacturing
C118S724000, C156S329000
Reexamination Certificate
active
06321134
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to the manufacture of substrates. More particularly, the invention provides techniques including an apparatus and system software for processing substrates using a cluster tool apparatus with plasma immersion ion implantation (“PIII”). The present cluster tool apparatus with PIII can be used for the manufacture of a variety of substrates such as a silicon-on-insulator substrates for semiconductor integrated circuits, for example. Additionally, the present cluster tool apparatus can be generally used for the manufacture of integrated circuits. But it will be recognized that the invention has a wider range of applicability; it can also be applied to other substrates for multi-layered integrated circuit devices, three-dimensional packaging of semiconductor devices, photonic devices, piezoelectronic devices, microelectromechanical systems (“MEMS”), sensors, actuators, epitaxial-like substrates using similar or dis-similar materials, solar cells, flat panel displays (e.g., LCD, AMLCD), biological and biomedical devices, and the like.
As device size becomes smaller and wafer size becomes larger, it has been desirable to fabricate integrated circuits on multi-layered substrates such as a silicon-on-insulator (“SOI”) substrate or wafer, rather than conventional “bulk” silicon wafers. A variety of techniques have been proposed or used for fabricating the SOI wafer. These techniques include, among others, bonding a thick film of silicon material onto an insulating layer formed overlying a bulk substrate. The thick film of silicon material is commonly “thinned” by way of grinding and polishing techniques such as chemical mechanical planarization. Although this technique is fairly easy to useful in making an SOI wafer, the technique is extremely time consuming. Additionally, the technique is extremely expensive due to the use of the grinding or polishing technique, which often takes a long time and uses expensive processing chemicals. Grinding has also been shown to degrade device performance. Accordingly, an SOI wafer made by way of conventional bonding and grinding techniques are extremely costly and have numerous limitations.
A technique called “separation by implantation of oxygen,” commonly termed SIMOX also has been proposed. A detailed description of this process is described in Stanley Wolf Ph.D., SILICON PROCESSING FOR THE VLSI ERA (Volume 2), pages 66-79, which is hereby incorporated by reference. This technique generally uses conventional beam-line ion implanters for introducing the oxygen into the silicon wafer. Unfortunately, the conventional SIMOX process generally produces a costly resulting SOI wafer. This cost often stems from the long time needed to implant a sufficient dose of oxygen into the silicon wafer. Since ion implanters commonly represent one of the largest capital cost items in a fabrication facility, it is often difficult to allocate the implanter for use in the conventional SIMOX process, which is often used for a variety of other integrated circuit processing operations. Additionally, many fabrication facilities (e.g., integrated circuit and wafer) simply cannot afford purchasing additional ion implantation equipment due to its excessive cost. Accordingly, silicon-on-insulator wafers made using the conventional SIMOX process are often costly and generally take a long time to fabricate.
From the above, it is seen that techniques for the manufacture of substrates that are cost effective and efficient are often desirable.
SUMMARY OF THE INVENTION
According to the present invention, a technique including an apparatus and system software for producing an SOI substrate is provided. More particularly, the invention provides a variety of techniques including a software method and resulting devices for processing substrates using a cluster tool apparatus configured with a plasma immersion ion implantation system. The present cluster tool apparatus with PIII can be used for the manufacture of a variety of substrates such as a silicon-on-insulator substrate for semiconductor integrated circuits, for example. Additionally, the present cluster tool apparatus can generally be used for the manufacture of integrated circuits, as well as other devices.
In a specific embodiment, the present invention provides an apparatus having a memory for processing substrates using a novel cluster tool apparatus. The memory has a computer program in the form of software, which can be in the form of computer codes or the like. The codes include one or more for operating a transfer chamber comprising a robot therein. The codes also include one or more for operating (e.g., turning on and off) a plasma immersion ion implantation chamber that is coupled to the transfer chamber. A computer code also exists for operating a second chamber that is coupled to the transfer chamber. The second chamber can be selected from at least a CVD chamber, an etch chamber, a PVD chamber, a thermal annealing chamber, a bonding chamber, a CMP chamber, a thermal treatment chamber, a plasma treatment chamber, an epitaxial silicon (or other material) deposition chamber, and others. The present apparatus can process a plurality of substrates without breaking vacuum, which enhances process quality and device yields, among other factors. The codes perform a variety of functions described herein as well as outside the present specification to manufacture substrates in the present clustertool apparatus.
In an alternative specific embodiment, the present invention provides a clustertool system for manufacturing a silicon-on-insulator substrate using a novel chamber configuration, as well as other features. The present system has a computer memory including a variety of codes, which can be used to for one or more process recipes. The codes include one or more directed to a step of providing a donor substrate, e.g., silicon wafer. The codes include one or more directed to placing the donor substrate in a first chamber such as a PIII chamber. A code (or codes) is provided to introduce particles through a surface of the donor substrate to a selected depth underneath the surface by way of ion implantation or PIII. The particles are at a concentration at the selected depth to define a substrate material to be removed above the selected depth. Next, the system includes a code (or codes) directed to place the implanted donor substrate in a second chamber (which can also be the same as the first chamber). In the second chamber, which is a bonding chamber, the system includes a code (or codes) directed to bonding the donor substrate to a receptor or target substrate to form a multi-layered substrate. A code (or codes) are directed to place the multi-layered substrate in a third chamber such as a CCP chamber. A code (or codes) are used to provide energy to a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate, whereupon the cleaving action is made using a propagating cleave front to free a portion of the substrate material to be removed from the substrate. In preferred embodiments, the system also includes a code (or codes) directed to a plasma cleaning step for removing impurities off surfaces of the donor and receptor substrates before bonding to enhance the bonding process. In some embodiments, the system includes a code or codes directed to steps for recycling the donor substrate to save costs in manufacturing, for example. Here, the recycled donor substrate is used again as material.
Numerous benefits are achieved over pre-existing techniques using the present invention. In particular, the present invention provides a single solution or apparatus to form, for example, SOI wafers in a single (or multiple) cluster tool apparatus. The present invention carries out the functionality described herein using one or more computer codes in the form of a process recipe or the like. Additionally, the present invention uses a novel cleaning and bonding technique which can occur in a chamber design without being exposed to
Cheung Nathan
Henley Francois J.
Du Thuan
Lee Thomas
Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
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