Cluster tool method using plasma immersion ion implantation

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438690, 438692, 438710, 438712, H01L 21302

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active

061535249

ABSTRACT:
A cluster tool method using plasma immersion ion implantation chamber. In some embodiments, the cluster tool method also includes a controlled cleaving process chamber, as well as others.

REFERENCES:
patent: 4746394 (1988-05-01), Sueta et al.
patent: 4808546 (1989-02-01), Moniwa et al.
patent: 5183775 (1993-02-01), Levy
patent: 5196355 (1993-03-01), Wittkower
patent: 5289010 (1994-02-01), Shohet
patent: 5296272 (1994-03-01), Matossian et al.
patent: 5305221 (1994-04-01), Atherton
patent: 5311028 (1994-05-01), Glavish
patent: 5342652 (1994-08-01), Foster et al.
patent: 5354381 (1994-10-01), Sheng
patent: 5380682 (1995-01-01), Edwards et al.
patent: 5427638 (1995-06-01), Goetz et al.
patent: 5436175 (1995-07-01), Nakato et al.
patent: 5498290 (1996-03-01), Matossian et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5554249 (1996-09-01), Hasegawa
patent: 5554853 (1996-09-01), Rose
patent: 5580429 (1996-12-01), Chan et al.
patent: 5641707 (1997-06-01), Moslehi
patent: 5661043 (1997-08-01), Rissman et al.
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5822172 (1998-10-01), White
patent: 5854123 (1998-12-01), Sato et al.
patent: 5856674 (1999-01-01), Kellerman
patent: 5965034 (1999-10-01), Vinogradou et al.
patent: 6013563 (2000-01-01), Henley et al.
Low Energy Separation Implantation of Oxygen Strucuture via Plasma Source Ion Implantation, L. Zhang, et al Appl. Phys. Lett. 65 (8) Aug. 22, 1994.

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