Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-04-28
2009-10-27
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S200000, C257S288000, C257SE21085, C257SE21126, C257SE21129, C257SE21134
Reexamination Certificate
active
07608865
ABSTRACT:
A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to a T-gate opening; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to the shape of the club extension wherein the area corresponding to the club extension is approximately 1 micron to an ohmic source side of a T-gate and approximately 0.5 microns forward from a front of the T-gate; developing out the bi-layer resist in the exposed area that corresponds to the T-gate opening; developing out the bi-layer resist in the exposed area that corresponds to the club extension; and forming the T-gate and club extension through a metallization process.
REFERENCES:
patent: 5385851 (1995-01-01), Misawa et al.
patent: 6387783 (2002-05-01), Furukawa et al.
patent: 6489639 (2002-12-01), Hoke et al.
patent: 7413942 (2008-08-01), Pellens et al
patent: 7465527 (2008-12-01), Kon et al.
patent: 7465967 (2008-12-01), Smith et al.
patent: 7468295 (2008-12-01), Shim et al.
Chen Yaochung
Coffie Robert
Liu Po-Hsin
Namba Carol Osaka
Smorchkova Ioulia
Carmen Patti Law Group, LLC
Nhu David
Northrop Grumman Space & Mission Systems Corp.
LandOfFree
Club extension to a T-gate high electron mobility transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Club extension to a T-gate high electron mobility transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Club extension to a T-gate high electron mobility transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4075886