Closely pitched polysilicon fuses and method of forming the same

Details Closely pitched polysilicon fuses and method of forming the same Closely pitched polysilicon fuses and method of forming the same

1997-07-30

1999-09-21

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257530, H01L 2900

Patent

active

059557737

ABSTRACT:
A method for decreasing the pitch of polysilicon fuses uses tungsten barriers formed adjacent to the fuse elements. The tungsten barriers are made compatible with the process to form a crack stop by stacking tugsten at the via level on top of the tungsten at the contact level in the crack stop. An interlevel dielectric is used as a cover for the fuse.

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