Closed cell trench metal-oxide-semiconductor field effect...

Details Closed cell trench metal-oxide-semiconductor field effect... Closed cell trench metal-oxide-semiconductor field effect...

2007-10-09

2007-10-09

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S135000, C257S327000, C257S329000, C257S331000, C257S401000, C257SE29201, C257SE29198, C257SE27091

Reexamination Certificate

active

10726922

ABSTRACT:
Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.

REFERENCES:
patent: 5866931 (1999-02-01), Bulucea et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 6346438 (2002-02-01), Yagishita et al.
patent: 6627950 (2003-09-01), Bulucea et al.
patent: 6838730 (2005-01-01), Kawaguchi et al.
patent: 6906380 (2005-06-01), Pattanayak et al.
patent: 2001/0003367 (2001-06-01), Hshieh et al.
patent: 2003/0062570 (2003-04-01), Darwish et al.
patent: 2003/0178673 (2003-09-01), Bhalla et al.
patent: 2004/0195618 (2004-10-01), Saito et al.

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