Specialized metallurgical processes – compositions for use therei – Processes – Electrothermic processes
Patent
1976-12-21
1978-07-11
Rutledge, L. Dewayne
Specialized metallurgical processes, compositions for use therei
Processes
Electrothermic processes
204192R, 428613, C22F 102, C22F 104, C22F 108, C22F 111
Patent
active
040999610
ABSTRACT:
Foamed metals and metal alloys which have a closed cellular structure are prepared by heating a metal body containing entrapped inert gas uniformly distributed throughout to a temperature above the melting point of the metal and maintaining the body at this temperature a period of time sufficient to permit the entrapped gas to expand, forming individual cells within the molten metal, thus expanding and foaming the molten metal. After cell formation has reached the desired amount, the foamed molten metal body is cooled to below the melting temperature of the metal. The void area or density of the foamed metal is controlled by predetermining the amount of inert gas entrapped in the metal body and by the period of time the metal body is maintained in the molten state. This method is useful for preparing foamed metals and metal alloys from any metal or other material of which a body containing entrapped inert gas can be prepared.
REFERENCES:
patent: 2553016 (1951-05-01), Sosnick
patent: 3705030 (1972-12-01), Berry, Jr. et al.
patent: 4020131 (1977-04-01), Feradag
Kelley, R., et al. "Diffusion in Inert-Gas Bombarded Pt and Al."; Phys Stat Sol. vol. 13, No. 55, (1966), pp. 55-69.
Lee, W. et al.; Argon Entrapment in Metal Films by DC Triode Sputtering," Journal of Applied Physics vol. 46, No. 4, (Apr. 1975), pp. 1728-1732.
Blackman, A. G., et al.; "D. C. Bias Sputtered Aluminum Films", IBM Research (Jul. 27, 1972), RC 3952 pp. 1-12.
Mitchell, I. V. et al.; "Gas Incorporation in and Evaporated Gold Films", Vacuum vol. 21, No. 12, Pergaman Press Ltd. pp. 591-595.
Winters, H. F., et al. "Gas Incorporation Into Sputtered Films", Journal of Applied Physics, vol. 38, No. 10. (Sep., 1967), pp. 3928-3934.
Heim, G., et al.; "Ion Implanting During Film Growth and its Effect on the Superconducting Properties of Niobium", J. of App Phys, 25 vol. 46 (9/75) pp. 4006-4012.
Carlson Dean E.
Churm Arthur A.
Lewis Michael L.
Rutledge L. Dewayne
The United States of America as represented by the United States
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