Cleaved silicon substrate active device

Details Cleaved silicon substrate active device Cleaved silicon substrate active device

2006-11-16

2008-12-16

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

C438S455000, C438S458000

Reexamination Certificate

active

07466011

ABSTRACT:
A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting H in the Si substrate, forming a cleaving plane (peak concentration (Rp) H layer) in the Si substrate about as deep as the gettering regions; bonding the circuit to a receiver substrate; cleaving the Si substrate along the cleaving plane; and binding the implanted H underlying the S/D regions with p-dopant in the gettering regions, as a result of post-bond annealing.

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