Cleaning solutions and etchants and methods for using same

Details Cleaning solutions and etchants and methods for using same Cleaning solutions and etchants and methods for using same

2007-03-20

2007-03-20

Webb, Gregory (Department: 1751)

Cleaning compositions for solid surfaces, auxiliary compositions

Cleaning compositions or processes of preparing

For cleaning a specific substrate or removing a specific...

C510S176000, C134S001300, C134S003000

Reexamination Certificate

active

10974569

ABSTRACT:
Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or “multi” quaternary -onium fluoride that includes two or more quaternary- onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.

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