Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-07-20
2008-11-11
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S756000
Reexamination Certificate
active
07449417
ABSTRACT:
There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.
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Hong Chang-Ki
Kim Sang-Yong
Shim Woo-Gwan
Dang Trung
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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