Cleaning solution for silicon surface and methods of...

Details Cleaning solution for silicon surface and methods of... Cleaning solution for silicon surface and methods of...

2011-02-01

2011-02-01

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S704000, C438S719000, C438S745000, C438S753000, C257SE21309, C134S001200, C134S001300, C510S175000

Reexamination Certificate

active

07879735

ABSTRACT:
A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used to clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.

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Korean Office Action dated Nov. 15, 2006.

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