Cleaning solution for removing damaged portion of...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C134S001200, C134S041000, C216S104000, C252S079100

Reexamination Certificate

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07135413

ABSTRACT:
A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.

REFERENCES:
patent: 5520299 (1996-05-01), Belcher et al.
patent: 6143706 (2000-11-01), Morinaga

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