Cleaning solution for cleaning semiconductor device and cleaning

Details Cleaning solution for cleaning semiconductor device and cleaning Cleaning solution for cleaning semiconductor device and cleaning

1996-08-15

1999-03-02

Knode, Marian C.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 2, 134 12, 134 13, 510202, 510206, 510257, C23G 101, C03C 2300

Patent

active

058765093

ABSTRACT:
A cleaning solution of a semiconductor device is composed of aqueous ammonia (NH.sub.4 OH), methanol (CH.sub.3 OH), hydrofluoric acid (HF) and deionized water (DI--H.sub.2 O), the volume ratio of NH.sub.4 OH to CH.sub.3 OH to DI--H.sub.2 O being 1:1-50:0.1-50, and the volume of HF being 1-10,000 ppm with respect to the mixture solution of NH.sub.4 OH, CH.sub.3 OH and DI--H.sub.2 O. The cleaning solution can be manufactured by simply mixing the respective compositions. The cleaning solution can strip polymers and particles within a short time, without etching or damaging the cleaned metal layers. Since the cleaning process of a semiconductor device is simplified, the processing cost is reduced and the yield and reliability are improved.

REFERENCES:
patent: 4215005 (1980-07-01), Vander Mey
patent: 4343677 (1982-08-01), Kinsbron et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 5078832 (1992-01-01), Tanaka
patent: 5112437 (1992-05-01), Watanabe et al.
Patent Abstracts of Japan: Vol. 16 No. 295 (C-0975), 30 Jun. 1992 & JP-A-04 080297 (Piyuretsukusu) 13 Mar. 1992.
Patent Abstracts Of Japan; Vol. 12 No. 357 (E-662), 26 Sep. 1988 & JP-A-63 114128 (Showa Denko)19 May 1988.

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