Cleaning of hydrogen plasma down-stream apparatus

Details Cleaning of hydrogen plasma down-stream apparatus Cleaning of hydrogen plasma down-stream apparatus

1995-05-04

1999-03-23

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 12, 134 13, 134 2, 134 18, 134 221, 134 2211, 134 30, 216 67, 216 69, B08B 700

Patent

active

058853618

ABSTRACT:
A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

REFERENCES:
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patent: 5356478 (1994-10-01), Chen et al.
patent: 5478403 (1995-12-01), Shinagawa et al.
patent: 5500393 (1996-03-01), Nishibayashi et al.
patent: 5620526 (1997-04-01), Watatani et al.
patent: 5620559 (1997-04-01), Kikuchi

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