Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-17
2005-05-17
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06893964
ABSTRACT:
A cleaning gas that is obtained by vaporizing a carboxylic acid is supplied into a treatment chamber having an insulating substance adhering to the inside thereof, and the inside of the treatment chamber is evacuated. When the cleaning gas supplied into the treatment chamber comes in contact with the insulating substance adhering to an inside wall and a susceptor in the treatment chamber, the insulating substance is turned into a complex, so that the complex of the insulating substance is formed. The complex of the insulating substance is easily vaporized due to its high vapor pressure. The vaporized complex of the insulating substance is discharged out of the treatment chamber by the evacuation.
REFERENCES:
patent: 4250225 (1981-02-01), Shirahata et al.
patent: 4393092 (1983-07-01), Gill
patent: 4765860 (1988-08-01), Ueno et al.
patent: 5178962 (1993-01-01), Miyamoto et al.
patent: 6383346 (2002-05-01), Ando et al.
patent: 19833448 (2000-02-01), None
patent: 774778 (1997-05-01), None
patent: 9-181054 (1997-07-01), None
patent: 10-223614 (1998-08-01), None
patent: 2000-096241 (2000-04-01), None
patent: 9836449 (1998-08-01), None
Crowell & Moring LLP
Nhu David
Tokyo Electron Limited
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