Cleaning method for semiconductor wafer processing apparatus

Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment

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134 26, 134 30, 134 36, 156345, 156643, B44C 122

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050357514

ABSTRACT:
An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.

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