Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Patent
1991-05-23
1992-07-14
McFarlane, Anthony
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
134 26, 134 30, 134 36, 156345, 156643, B44C 122
Patent
active
051299585
ABSTRACT:
An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.
REFERENCES:
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 4581101 (1986-04-01), Senoue et al.
patent: 4657616 (1987-04-01), Benzing et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4778532 (1988-10-01), McConnel et al.
patent: 4797178 (1989-01-01), Bui et al.
patent: 4820377 (1989-04-01), Davis et al.
patent: 4857139 (1989-08-01), Tashiro et al.
patent: 4975147 (1990-12-01), Tahara et al.
Kobayashi Naoaki
Nagashima Makoto
Wong Jerry
Applied Materials Inc.
McFarlane Anthony
Taylor John P.
LandOfFree
Cleaning method for semiconductor wafer processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cleaning method for semiconductor wafer processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cleaning method for semiconductor wafer processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-332577