Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-10-10
2000-09-26
Chea, Thorl
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438709, 216 59, 216 63, 216 66, 216 79, 134 1, H01L 2100
Patent
active
06124211&
ABSTRACT:
A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.
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Butterbaugh Jeffery W.
Fayfield Robert T.
Gray David C.
Chea Thorl
FSI International Inc.
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