Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate
2005-03-08
2005-03-08
Le, Dinh T. (Department: 2816)
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
C327S536000
Reexamination Certificate
active
06865116
ABSTRACT:
The present invention relates to a clamp circuit and a boosting circuit using the same. In order to drop a boosting voltage to a target word line voltage, at least one or more clamp circuit is provided. At least one or more of the clamp circuits are independently driven in a desired sensing period to lower the boosting voltage. Thus, rapid read access time is accomplished upon a data read operation. Current consumption can be minimized and a stabilized word line voltage can be generated.
REFERENCES:
patent: 6111449 (2000-08-01), Tobita
patent: 6492862 (2002-12-01), Nakahara
patent: 6545917 (2003-04-01), Kim
patent: 6577514 (2003-06-01), Shor et al.
Kim Dae Han
Kwon Yi Jin
Hynix / Semiconductor Inc.
Le Dinh T.
Mayer Brown Rowe & Maw LLP
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