Cladding of an interconnect for improved electromigration perfor

Details Cladding of an interconnect for improved electromigration perfor Cladding of an interconnect for improved electromigration perfor

1996-06-28

1999-06-01

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438648, 438688, H01L 21441

Patent

active

059096357

ABSTRACT:
According to one embodiment, a method for encapsulating a conductive structure having a first layer, a second layer and a third layer, with a cladding layer, for improved electromigration performance is described. The method comprises the following steps: forming a fourth layer over the conductive structure and reacting at least a portion of the first layer, the third layer and the fourth layer with a portion of the second layer to form a cladding layer that encapsulates an unreacted portion of the second layer. In one embodiment of the present invention, the cladding layer is TiAl.sub.3.

REFERENCES:
patent: 4742014 (1988-05-01), Hooper et al.
patent: 4963510 (1990-10-01), Roane
patent: 5164332 (1992-11-01), Kumar
patent: 5332693 (1994-07-01), Kim
Donald S. Gardner, et al. "Encapsulated Copper Interconnection Device" 1991 Proc. 8th Int. IEEE VLSI Multilevel Interconnection Conf. (Jun. 1991). pp. 99-108.

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