Circularly symmetric, large-area, high-deposition-rate sputterin

Details Circularly symmetric, large-area, high-deposition-rate sputterin Circularly symmetric, large-area, high-deposition-rate sputterin

1992-03-09

1993-08-03

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419216, 2041922, 20429806, 20429816, 20429823, C23C 1434

Patent

active

052325695

ABSTRACT:
Disclosed is a sputtering apparatus and method for deposition of a film on a substrate with means for exciting a plasma by ultrahigh radio frequency or microwave at the electron cyclotron resonance to create a region of plasma which is devoid of magnetic field and at least one high-radio frequency planar disk diode positioned within the region devoid of magnetic field, a target attached to said rf planar diode, and a high-radio frequency substrate biasing electrode parallel to the planar diode.

REFERENCES:
patent: 3369991 (1968-02-01), Davidse
patent: 4534842 (1985-08-01), Arnal
patent: 4721553 (1988-01-01), Saito et al.
patent: 4745337 (1988-05-01), Pichot et al.
patent: 4957604 (1990-09-01), Steininger
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5091049 (1992-02-01), Campbell et al.
Article: Burke, et al.: "DECR in Silicon Processing," J. Vac. Sci. Technol. A. vol. 8, No. 3, May/Jun. 1990, pp. 2932-2938.

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