Static information storage and retrieval – Read/write circuit – Noise suppression
Reexamination Certificate
2011-02-22
2011-02-22
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Noise suppression
C365S226000, C365S227000, C365S228000, C365S229000
Reexamination Certificate
active
07894285
ABSTRACT:
Memory devices and methods are provided for reducing simultaneous switching output noise and power supply noise during burst data write and refresh operations. An embodiment of a memory device according to the present invention includes a first power domain coupled to some of the components of the memory device and a second power domain coupled to different components of the memory device. One or more distributed power domain coupling circuits may be coupled to the first and second power domains. The power domain coupling circuit includes a controller configured to generate an enable signal responsive to control signals, data signals, or any combination thereof. The power domain coupling circuit also includes coupling circuitry coupled to the first and second power domains and coupled to the controller. The coupling circuitry is configured to couple the first and second power domains together responsive to the enable signal.
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Ma Yantao
Merritt Todd
Dorsey & Whitney LLP
Luu Pho M
Micro)n Technology, Inc.
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