Static information storage and retrieval – Read/write circuit – Including signal clamping
Reexamination Certificate
2005-03-30
2009-08-04
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including signal clamping
C365S189070, C365S189090, C365S189110, C365S189150, C365S163000
Reexamination Certificate
active
07570524
ABSTRACT:
A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access element for coupling the storage element to the read circuit in response to a selection of the memory cell, the read circuit including: a sense current supply arrangement for supplying a sense current to the at least one memory cell; and at least one sense amplifier for determining the logic value stored in the memory cell on the basis of a voltage developing thereacross, the at least one sense amplifier comprising a voltage limiting circuit for limiting the voltage across the memory cell for preserving the stored logic value, wherein the voltage limiting circuit includes a current sinker for sinking a clamping current, which is subtracted from the sense current and depends on the stored logic value.
REFERENCES:
patent: 6944041 (2005-09-01), Li et al.
patent: 6944077 (2005-09-01), Morikawa
patent: 7099187 (2006-08-01), Li et al.
patent: 2006/0279979 (2006-12-01), Lowrey et al.
patent: 2007/0014150 (2007-01-01), Cho et al.
U.S. Appl. No. 11/093.877, filed Mar. 30, 2005, Tyler Lowrey et al.,Using A Bit Specific Reference Level To Read a Memory.
U.S. Appl. No. 11/093,864, filed Mar. 30, 2005, Tyler Lowrey et al.,Using Higher Current to Read A Triggered Phase Change Memory.
U.S. Appl. No. 11/093,878, filed Mar. 30, 2005, Ward D. Parkinson et al.,Reading Phase Change Memories.
U.S. Appl. No. 11/093,709, filed Mar. 30, 2005, Ferdinando Bedeschi et al.,Detecting Switching Of Access Elements Of Phase Change Memory Cells.
Bedeschi Ferdinando
Resta Claudio
Ovonyx Inc.
Tran Andrew Q
Trop Pruner & Hu P.C.
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