Circuit with fuse/anti-fuse transistor with selectively...

Details Circuit with fuse/anti-fuse transistor with selectively... Circuit with fuse/anti-fuse transistor with selectively...

2011-07-19

2011-07-19

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S208000

Reexamination Certificate

active

07982245

ABSTRACT:
A semiconductor integrated circuit is disclosed which includes a main transistor and at least one of a fuse transistor or an anti-fuse transistor (“fuse/anti-fuse transistor”). Each transistor type includes an active region formed in a semiconductor substrate, a gate stack comprising a gate insulation layer and a gate electrode sequentially formed on the active region, and source/drain regions separated across the gate stack, but the gate insulation layer of the fuse/anti-fuse transistor is selectively damaged during fabrication.

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