Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1995-09-07
1997-04-01
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257750, 257704, 257705, 257741, H01L 2302, H01L 2348, H01L 2962, C04B 3558
Patent
active
056169566
ABSTRACT:
Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.
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Horiguchi Akihiro
Kasori Mitsuo
Kimura Kazuo
Monma Jun
Oh-Ishi Katsuyoshi
Kabushiki Kaisha Toshiba
Loke Steven H.
Williams Alexander Oscar
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