Circuit structure having at least one MOS transistor and method

Details Circuit structure having at least one MOS transistor and method Circuit structure having at least one MOS transistor and method

1997-04-01

1999-10-12

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257336, 257344, 257408, H01L 2976, H01L 2994

Patent

active

059659262

ABSTRACT:
A circuit structure having at least one MOS transistor whose source/drain regions are doped by a first conductivity type and whose gate electrode is doped by a conductivity type which is opposite to the first. The gate electrode has a lower dopant concentration at at least one of its edges than in its center. In the ON state, the gate electrode is driven to accumulation, with the result being that no gate depletion occurs. Such a circuit structure is also suitable for CMOS circuits containing PMOS transistors having an n-doped gate.

REFERENCES:
patent: 5418392 (1995-05-01), Tanabe
patent: 5693975 (1997-12-01), Lien
patent: 5786620 (1998-07-01), Richards, Jr. et al.
patent: 5844272 (1998-12-01), Soderbarg et al.

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